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万代IGBTs

作者：建州电子 发布时间：2023-05-23 14:32点击：

万代带反并联二极管的IGBT产品型号及应用参数

Part Number Status Package Configuration

VC

(max)

 IC (max) IF EON EOFF Qg VF Qrr Irm
25°C 100°C 25°C
V A A A V mJ mJ V µC A
AOTF8B65MQ1 New TO220F

IGBT with

 Anti-Parallel Diode

 650 16 8 1.8 0.16 0.11 22 1.52 0.2 3.49
AOB10B60D Full Production TO263

IGBT with

 Anti-Parallel Diode

 600 20 10 1.53 0.26 0.07 17.4 1.52 0.25 5
AOB10B65M1 Full Production TO263

IGBT with

 Anti-Parallel Diode

 650 20 10 1.6 0.18 0.13 24 1.9 0.4 3.8
AOB15B60D Full Production TO263

IGBT with

 Anti-Parallel Diode

 600 30 15 1.6 0.42 0.11 25.4 1.43 0.48 5.8
AOB15B65M1 Full Production TO263

IGBT with

 Anti-Parallel Diode

 650 30 15 1.7 0.29 0.2 32 1.77 0.7 4.7
AOB15B65MQ1 Full Production TO263

IGBT with

 Anti-Parallel Diode

 650 30 15 1.7 0.29 0.2 32 1.65 0.24 3.7
AOB20B65M1 Full Production TO263

IGBT with

 Anti-Parallel Diode

 650 40 20 1.7 0.47 0.27 46 1.66 0.8 5.2
AOB5B60D Full Production TO263

IGBT with

 Anti-Parallel Diode

 600 10 5 1.55 0.14 0.04 9.4 1.46 0.23 4.4
AOB5B65M1 Full Production TO263

IGBT with

 Anti-Parallel Diode

 650 10 5 1.57 0.08 0.07 14 1.8 0.24 2.78
AOD5B60D Full Production TO252

IGBT with

 Anti-Parallel Diode

 600 10 5 1.55 0.14 0.04 9.4 1.46 0.23 4.4
AOD5B65M1 Full Production TO252

IGBT with

 Anti-Parallel Diode

 650 10 5 1.57 0.08 0.07 14 1.8 0.24 2.78
AOD5B65MQ1E Full Production TO252

IGBT with

 Anti-Parallel Diode

 650 10 - 2.15 0.09 0.06 8.8 2.06 0.11 2.46
AOD5B65N1 Full Production TO252

IGBT with

 Anti-Parallel Diode

 650 10 5 2.5 0.081 0.049 9.2 2.13 0.19 2.5
AOD6B65MQ1E Full Production TO252

IGBT with

 Anti-Parallel Diode

 650 12 8 1.9 0.11 0.08 13.5 1.81 0.13 2.61
AOD7B65M3 Full Production TO252

IGBT with

 Anti-Parallel Diode

 650 14 7 1.87 0.108 0.099 14 2.6 0.29 3
AOD8B65MQ1 Full Production TO252

IGBT with

 Anti-Parallel Diode

 650 16 8 1.8 0.16 0.11 22 1.9 0.2 3.49
万代IGBT Discrete产品型号及应用参数
Part Number Status Package Configuration VCE (max) IC (max) IF VCE(sat)
(typ)		 EON EOFF Qg
25°C 100°C 25°C
V A A A V mJ mJ nC
AOB30B65LN2V New TO263 IGBT Discrete 650 60 30 - 1.86 0.88 0.35 52
AOBS30B65LN Full Production TO263 IGBT Discrete 650 60 30 - 1.86 0.74 0.33 52
AOKS30B60D1 Full Production TO247 IGBT Discrete 600 60 30 - 2 1.1 0.24 34
AOKS40B60D1 Full Production TO247 IGBT Discrete 600 80 40 - 1.85 1.55 0.3 45
AOKS40B65H1 Full Production TO247 IGBT Discrete 650 80 40 - 1.9 1.27 0.46 63
AOKS40B65H2AL Full Production TO247 IGBT Discrete 650 80 40 - 2.05 1.17 0.54 61
AOTS40B65H1 Full Production TO220 IGBT Discrete 650 80 40 - 1.9 1.27 0.46 63
万代快速恢复二极管FRD产品型号及应用参数
Part Number Status Package Configuration VBR VF
(typ)		 IF IFM QRR
(typ)		 Irm
(typ)		 trr TJ
25°C
V V A A µC A nS °C
AOGF20D65L1L New TO3PF Fast Recovery Diodes (FRD) 650 1.54 20 60 0.34 5.6 104 175
AOGF30D65L1L New TO3PF Fast Recovery Diodes (FRD) 650 1.48 30 90 0.54 7.6 125 175
AOGF40D65L1L New TO3PF Fast Recovery Diodes (FRD) 650 1.5 40 120 0.58 8 126 175

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